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(IC) substrates. Before taking the form of a wafer, a single crystal silicon ingot must go through a series of machining processes, including slicing, lapping, surface grinding, edge .
The grinding process usually consists of two steps. First, a coarse abrasive wheel grind (typically ~350-500 grit diamond abrasive) removes material rapidly, but damages the sur.
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the IC is self ' upplied from the DC rail, eliminating the L = Wafer Lot need of an auxiliary . Abstract: .D-38 Rail Connector .D-47 Type GQ , grinding and the need to expose m.
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